SOT-MRAM Elements Based on Spin Hall Effect : Macrospin Model of Two-Step Switching Control

The article presents the results of a qualitative study model modern magnetic memory cell, in which spin Hall effect is used for recording. Cells square cross-section with longitudinal anisotropy active layer are considered. Based on Landau-Lifshitz-Gilbert vector equation, mathematical controlling process writing zero and one into cell constructed. In approximation uniform distribution magnetization, system equations derived that describes dynamics magnetization under action field current. parameters qualitatively equivalent determined. It has been established at currents fields both cases there two main stable equilibrium positions. These equilibria, depending mutual orientation reference layers, correspond to one, written cell. transition from state another described by solving differential equations. A bifurcation diagram dynamical variables "field-current" shown given configuration element, external influences transfer an intermediate plane free layer, which, when current turned off, leads or critical switching estimated as function applied field. Keywords: spintronics, orbitronics, effect, current, charge torque, anisotropy, planar anisotropy.